Resistive RAMs and Phase Change Memory

Provide your perspective (~400 -500 words/ ~ 1 page [ no hard limit ]) on the potential value that any two of the following three new memory technologies, Phase Change Memory (PCM-RAMs), Spin-Transfer Torque RAMs (STT-RAMs), and Resistive RAMs (ReRAMs), add to the more mature memory technologies (SRAM and DRAM) studied in the lecture. Provide discussion on topics including, but not limited to: – What new features are enabled by these memories (compared to SRAM/DRAM)? More broadly, describe what the two technologies (of the three above ) that you’ve picked are, and how they fit into the existing memory landscape of FLASH, SRAM, DRAM, etc. – Which companies are engaged in their fabrication and design? – What are end-use products that could benefit from such new technologies (e.g. for the above companies or researchers, are there any envisioned products or application areas – if so, why are these technologies well-suited to these areas)? – Reviewing the current information on these technologies, what use case did you find most interesting? — Please remember to include relevant reference sources (URLs+dates are fine for web-based resources. For scholarly works, use any normal citation format) for your discussion at the end

Solution Preview

The resistive RAM is also known as resistive random access memory. This technology is a form of volatile storage that functions by altering the resistance of a formulated solid dielectric material. The resistive RAM contains a device called memristor…

(545 Words)